American Microelectronics Data Annual 1964–65 by G. W. A. Dummer, J. Mackenzie Robertson

By G. W. A. Dummer, J. Mackenzie Robertson

American Microelectronics info Annual 1964-65 presents entire details on diversified microelectronics on hand within the united states
The microelectronics coated within the textual content contains skinny movie, semiconductor, and built-in and hybrid circuit assemblies. the choice additionally presents an index that may be applied for finding assemblies by way of the advantage of circuit functionality or layout classification. info at the thoughts crucial within the perform of microelectronics is additionally incorporated.
The booklet might be of significant use to pupil electronics engineers and technicians.

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0 V s. o 15 20 pf MIN UNITS cob Output CBpacitance C CI Isolation CBpacitance BV CIO Collector-to-Isolatlon Breakdown Voltage 1c = 0. : = 0 60 BV CBO Collector-to-Base Breakdown Voltage Ic 0. 01 IE = 0 60 (sust) V CEO Collector-to-Emitter Sustaining Voltage (Pulsed) (Note 2) 1c = 10 mA; IB = 0 v 35 BV E BO Emitter-to-Base Breakdown Voltage Ic = O·, IE = 0. 01 mA v 5. 0 v 1CBO Collector Cutoff Current I E V CB = 5. 0 V = = v mA; O,· = 10 V 2. 5 IE = O·' V = 10 V CB 1. 0 V B C 1csoC125°C) Collector Cutoff Current 1c10 Collector-to-Isolation Leakage Current 1E: = O; Vc1 = 10 V 25 Ic10(125°C) Collector-to-Isolation Leakage Current 1E: = O; 15 1Eso Emitter Cutoff Current Ic - O·, V 0V E B = 3.

Transformers simplify the design of the low level input stage. A two to one turns ratio gives a voltage gain and at the same time rejects the common mode noise from the films. The sense amplifier shown in Fig. 2 1 receives its input through a transformer having 4 primary and 8 secondary turns. The inputs connect to the base and the emitter of the first stage. Due to the equal emitter and collector resistors, the first stage re_jects the common mode Ref. C. L. R u t h roff, "Some Broad-Band Transfo r m e r s , ' ' 47 Fig.

This also enters into the area of reliability and economy since the prodQctiGn fac� can prodllc& the same basic slices contim1ally to fab­ ricate circuits meeting customers' specific applfea­ Contacts to Resistor and Opened Transistors. Alumtnum passivated layer ts then deposited over the thin film components to protect them from. mechanical or chemical damage. One of the secondary effects of this layer is its possible use as an inSulatfng pad to construct crossover connections mthin the circuit.

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